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MFG:ST Package Cooled:SOP
Part Number: LF357
MFG: ST
Package Cooled: SOP
Description: These are the first monolithic JFET input operational ampli- fiers to incorporate well matched, high v...
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LF357
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DataSheet
General Description
LF357 General Description
These are the first monolithic JFET input operational ampli- fiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Tech- nology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time,low voltage and current noise and a low 1/f noise corner.
LF357 Maximum Ratings
If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for
availability and specifications.
LF155/6 LF256/7/LF356B LF355/6/7
Supply Voltage ±22V ±22V ±18V
Differential Input Voltage ±40V ±40V ±30V
Input Voltage Range (Note 2) ±20V ±20V ±16V
Output Short Circuit Duration Continuous Continuous Continuous
TJMAX
H-Package 150˚C 115˚C 115˚C
N-Package 100˚C 100˚C
M-Package 100˚C 100˚C
Power Dissipation at TA = 25˚C (Notes
1, 8)
H-Package (Still Air) 560 mW 400 mW 400 mW
H-Package (400 LF/Min Air Flow) 1200 mW 1000 mW 1000 mW
N-Package 670 mW 670 mW
M-Package 380 mW 380 mW
Thermal Resistance (Typical) JA
H-Package (Still Air) 160˚C/W 160˚C/W 160˚C/W
H-Package (400 LF/Min Air Flow) 65˚C/W 65˚C/W 65˚C/W
N-Package 130˚C/W 130˚C/W
M-Package 195˚C/W 195˚C/W
(Typical) JC
H-Package 23˚C/W 23˚C/W 23˚C/W
Storage Temperature Range −65˚C to +150˚C −65˚C to +150˚C −65˚C to +150˚C
Soldering Information (Lead Temp.)
Metal Can Package
Soldering (10 sec.) 300˚C 300˚C 300˚C
Dual-In-Line Package
Soldering (10 sec.) 260˚C 260˚C 260˚C
Small Outline Package
Vapor Phase (60 sec.) 215˚C 215˚C
Infrared (15 sec.) 220˚C 220˚C
See AN-450 "Surface Mounting Methods and Their Effect on Product Reliability" for other methods of
soldering surface mount devices.
ESD tolerance
(100 pF discharged through 1.5kΩ) 1000V 1000V 1000V
LF357 Features
`Replace expensive hybrid and module FET op amps
`Rugged JFETs allow blow-out free handling compared with MOSFET input devices
`Excellent for low noise applications using either high or ow source impedance-very low 1/f corner
`Offset adjust does not degrade drift or common-mode ejection as in most monolithic amplifiers
`New output stage allows use of large capacitive loads 5,000 pF) without stability problems
`nternal compensation and large differential input voltage capability
`Rugged JFETs allow blow-out free handling compared with MOSFET input devices
`Excellent for low noise applications using either high or ow source impedance-very low 1/f corner
`Offset adjust does not degrade drift or common-mode ejection as in most monolithic amplifiers
`New output stage allows use of large capacitive loads 5,000 pF) without stability problems
`nternal compensation and large differential input voltage capability
LF357 Typical Application
·Precision high speed integrators
·Fast D/A and A/D converters
·High impedance buffers
·Wideband, low noise, low drift amplifiers
·Fast D/A and A/D converters
·High impedance buffers
·Wideband, low noise, low drift amplifiers
LF357
PDF/DataSheet Download
- Datasheet: LF357
- File Size: 1105195 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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LF356
These are the first monolithic JFET LF356 input operational ampli- fiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Tech- nology). These LF356 feature low input bias and offset currents/l...
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The LF355H is designed as one kind of JFET-input operational amplifiers which features several improvements compared to similar types from other manufactures: offset voltage drift with temperature and slw rate are guaranteed on all grades, not just on the mo...
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