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Part Number: LFE18500X

 

 

 

 

Description: NPN silicon planar epitaxial microwave power transistor in a FO-231 glued cap metal ceramic flange pac...


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LFE18500X General Description


NPN silicon planar epitaxial microwave power transistor in a FO-231 glued cap metal ceramic flange package, with emitter connected to flange.

LFE18500X Features

· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

LFE18500X Typical Application

Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.8 GHz and 1.9 GHz.

LFE18500X datasheet

LFE18500X
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