LH28F004SU-Z9

• 512K * 8 Word Configuration
• 2.7 V Write/Erase Operation (5 V ± 0.5 V V_PP, 3.0 V ± 0.3 V VCC, +15°C to +35°C)
No Requirement For DC/DC Converter
     To Write/Erase
• 150 ns Maximum Access Time
     (V_CC = 3.3 V ± 0.3 V)
• Minimum 2.7 V Read Capability
190 ns Maximum Access Time
     (V_CC = 2.7 V, -20°C to +85°C)
180 ns Maximum Access Time
     (V_CC = 2.7 V, 0°C to +70°C)
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
Command User Interface
Status Register
RY/BY Status Output
• System Performance Enhancement
Erase Suspend For Read
Two-Byte Write
Full Chip Erase
• Data Protection
Hardware Erase/Write Lockout During
Power Transitions
Software Erase/Write Lockout
• Independently Lockable For Write/Erase On Each Block (Lock Block and Protect Set/Reset)
• 4 A (Typ.) I_CC In CMOS Standby
• 0.2 A (Typ.) Deep Power-Down
• State-of-the-Art 0.45 m ETOX™ Flash Technology
• Extended Temperature Operation
-20°C to +85°C (Read)
+15°C to +35°C (Write/Erase)
• 42-pin, 0.67 mm * 8 mm * 8 mm

Temperature Under Bias ..................... -20 to +85
Storage Temperature ......................... -65 to +125
NOTE:
1. V_CC supply range during read is 2.7 to 3.6 V.
*WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability.

Sharp's LH28F004SU-Z9 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power  peration and very high read/write performance, the LH28F004SU-Z9 is also the ideal choice for designing embedded mass storage flash memory systems.
 
The LH28F004SU-Z9's independently lockable 32 symmetrical blocked architecture (16K each) extended cycling, low power operation, very fast write and read performance and selective block locking provide a highly flexible memory component suitable for cellular phone, facsimile, game, PC, printer and handy terminal. The LH28F004SU-Z9's 5.0 V/3.3 V power supply operation enables the design of memory cards which can be read in 3.3 V system and written in 5.0 V/3.3 V systems. Its x8 architecture allows the optimization of memory to processor interface. The flexible block locking option enables bundling of executable application software in a Resident Flash Array or memory card. Manufactured
on Sharp's 0.45 m ETOX™ process technology, the LH28F004SU-Z9 is the most cost-effective, high-density 3.3 V flash memory.