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MFG:SHARP D/C:05+
Part Number: LH28F008SC-V
MFG: SHARP
D/C: 05+
Description: The LH28F008SC-V/SCH-V flash memories with Smart 5 technology are high-density, low-cost, nonvolatile,...
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LH28F008SC-V
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DataSheet
General Description
LH28F008SC-V General Description
The LH28F008SC-V/SCH-V flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F008SC-V/SCH-V offer three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs.
LH28F008SC-V Maximum Ratings
Operating Temperature
• LH28F008SC-V
During Read, Block Erase, Byte Write
and Lock-Bit Configuration ........... 0 to +70 (NOTE 1)
Temperature under Bias.........................10 to +80
• LH28F008SCH-V
During Read, Block Erase, Byte Write
and Lock-Bit Configuration ... ...25 to +85 (NOTE 2)
Temperature under Bias............. ...........25 to +85
Storage Temperature.............................. 65 to +125
Voltage On Any Pin
(except VCC, VPP, and RP#) ...2.0 to +7.0 V (NOTE 3)
VCC Supply Voltage................. ...2.0 to +7.0 V (NOTE 3)
VPP Update Voltage during
Block Erase, Byte Write and
Lock-Bit Configuration .. ....2.0 to +14.0 V (NOTE 3, 4)
RP# Voltage with Respect to
GND during Lock-Bit
Configuration Operations.. 2.0 to +14.0 V (NOTE 3, 4)
Output Short Circuit Current .............. ....100 mA (NOTE 5)
LH28F008SC-V Features
• Smart 5 technology
5 V VCC
5 V or 12 V VPP
• High performance read access time
LH28F008SC-V85/SCH-V85
85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)
LH28F008SC-V12/SCH-V12
120 ns (5.0±0.5 V)
• Enhanced automated suspend options
Byte write suspend to read
Block erase suspend to byte write
Block erase suspend to read
• Enhanced data protection features
Absolute protection with VPP = GND
Flexible block locking
Block erase/byte write lockout during power transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
Sixteen 64 k-byte erasable blocks
• Enhanced cycling capability
100 000 block erase cycles
1.6 million block erase cycles/chip
• Low power management
Deep power-down mode
Automatic power saving mode decreases ICC in static mode
• Automated byte write and block erase
Command user interface
Status register
• ETOXTM* V nonvolatile flash technology
• Packages
40-pin TSOP Type I (TSOP040-P-1020)
Normal bend/Reverse bend
44-pin SOP (SOP044-P-0600)
48-ball CSP (FBGA048-P-0608)
LH28F008SC-V Connection Diagram
LH28F008SC-V
PDF/DataSheet Download
- Datasheet: LH28F008SC-V
- File Size: 273352 KB
- Manufacturer: SHARP [Sharp Electrionic Components]
- Click here to Download
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