LH28F016SC-L

• SmartVoltage technology
    2.7 V (Read-only), 3.3 V _or 5 V V_CC
    3.3 V, 5 V or 12 V V_PP
• High performance read access time LH28F016SC-L95/SCH-L95
   95 ns (5.0±0.25 V)/100 ns (5.0±0.5 V)/ 120 ns (3.3±0.3 V)/150 ns (2.7 to 3.6 V) LH28F016SC-L12/SCH-L12
   120 ns (5.0±0.5 V)/150 ns (3.3±0.3 V)/ 170 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
   Byte write suspend to read
   Block erase suspend to byte write
    Block erase suspend to read
• Enhanced data protection features
    Absolute protection with VPP = GND
    Flexible block locking
    Block erase/byte write lockout during power transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
    Thirty-two 64 k-byte erasable blocks
• Enhanced cycling capability
    100 000 block erase cycles
    3.2 million block erase cycles/chip
• Low power management
    Deep power-down mode
    Automatic power saving mode decreases ICC in static mode
• ETOX^TM* V nonvolatile flash technology
• Packages
    40-pin TSOP Type I (TSOP040-P-1020) Normal bend/Reverse bend
    44-pin SOP (SOP044-P-0600)
    [LH28F016SC-L]
    48-ball CSP (FBGA048-P-0810)
*ETOX is a trademark of Intel Corporation.