Purchase LH28F016SCH-L, In-stock LH28F016SCH-L From SeekIC.
MFG:SHARP D/C:05+
Part Number: LH28F016SCH-L
MFG: SHARP
D/C: 05+
Description: The LH28F016SC-L/SCH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvola...
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LH28F016SCH-L
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DataSheet
General Description
LH28F016SCH-L General Description
The LH28F016SC-L/SCH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F016SC-L/SCH-L offer three levels of protection : absolute protection with Vpp at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs.
LH28F016SCH-L Features
• SmartVoltage technology
2.7 V (Read-only), 3.3 V or 5 V VCC
3.3 V, 5 V or 12 V VPP
• High performance read access time LH28F016SC-L95/SCH-L95
95 ns (5.0±0.25 V)/100 ns (5.0±0.5 V)/ 120 ns (3.3±0.3 V)/150 ns (2.7 to 3.6 V) LH28F016SC-L12/SCH-L12
120 ns (5.0±0.5 V)/150 ns (3.3±0.3 V)/ 170 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
Byte write suspend to read
Block erase suspend to byte write
Block erase suspend to read
• Enhanced data protection features
Absolute protection with VPP = GND
Flexible block locking
Block erase/byte write lockout during power transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
Thirty-two 64 k-byte erasable blocks
• Enhanced cycling capability
100 000 block erase cycles
3.2 million block erase cycles/chip
• Low power management
Deep power-down mode
Automatic power saving mode decreases ICC in static mode
• ETOXTM* V nonvolatile flash technology
• Packages
40-pin TSOP Type I (TSOP040-P-1020) Normal bend/Reverse bend
44-pin SOP (SOP044-P-0600)
[LH28F016SC-L]
48-ball CSP (FBGA048-P-0810)
*ETOX is a trademark of Intel Corporation.
LH28F016SCH-L Connection Diagram
LH28F016SCH-L
PDF/DataSheet Download
- Datasheet: LH28F016SCH-L
- File Size: 2005799 KB
- Manufacturer: SHARP [Sharp Electrionic Components]
- Click here to Download
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LH28F016SA
The LH28F016SA is a high performance 16M (16,777,216 bit) block erasable non-volatile random access memory organized as either 1M × 16 or 2M × 8. The LH28F016SA includes thirty-two 64K (65,536) blocks or thirty-two 32-KW (32,768) blocks. A chip memory map is...
LH28F016LL
The LH28F016LL is a high performance 16M (16,777,216 bit) block erasable non-volatile random access memory organized as either 1M * 16 or 2M x 8. The LH28F016LL includes thirty-two 64K (65,536) blocks or thirty-two 32-KW (32,768) blocks. A chip memory map is...
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LH28F008SCT-L12
This datasheet contains LH28F008SCT-L12 specifications. Section 1 provides a flash memoryoverview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications. LH28F008SCT-L12 Flash memory documentat...
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