LH28F016SU

The LH28F016SU is a high performance 16M (16,777,216 bit) block erasable non-volatile random access memory organized as either 1M × 16 or 2M × 8.

The LH28F016SU includes thirty-two 64K (65,536) blocks or thirty-two 32-KW (32,768) blocks. A chip memory map is shown in Figure 4.

The implementation of a new architecture, with many enhanced features, will improve the device operating characteristics and results in greater product reliability and ease of use.

Among the significant enhancements of the LH28F016SU:
• 5 V Write/Erase Operation (5 V V_PP)
• 3.3 V Low Power Capability (2.7 V V_CC Read)
• Improved Write Performance
• Dedicated Block Write/Erase Protection
A 3/5 input pin reconfigures the device internally for optimized 3.3 V or 5.0 V read/write operation.

The LH28F016SU will be available in a 56-pin, 1.2 mm thick × 14 mm × 20 mm TSOP (Type I) package. This form factor and pinout allow for very high board layout densities.