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MFG:SHARP  D/C:05+  

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Part Number: LH28F160S5H-L

 

MFG: SHARP

 

D/C: 05+

Description: The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile,...


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LH28F160S5H-L General Description


The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards.

Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F160S5-L/S5H-L offer three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs.

The LH28F160S5-L/S5H-L are conformed to the flash Scalable Command Set (SCS) and the Common Flash Interface (CFI) specification which enable universal and upgradable interface, enable the highest system/device data transfer rates and minimize device and system-level implementation costs.

LH28F160S5H-L Features

• Smart 5 technology
    5 V VCC
    5 V VPP
• High speed write performance
    Two 32-byte page buffers
    2 µs/byte write transfer rate
• Common Flash Interface (CFI)
    Universal & upgradable interface
• Scalable Command Set (SCS)
• High performance read access time
LH28F160S5-L70
    70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)
LH28F160S5H-L70
    70 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)
LH28F160S5-L10/S5H-L10
    100 ns (5.0±0.5 V)
• Enhanced automated suspend options
    Write suspend to read
    Block erase suspend to write
    Block erase suspend to read
• Enhanced data protection features
    Absolute protection with VPP = GND
    Flexible block locking
     Erase/write lockout during power transi
• SRAM-compatible write interface
• User-configurable x8 or x16 operation
• High-density symmetrically-blocked architec
    Thirty-two 64 k-byte erasable blocks
• Enhanced cycling capability
    100 000 block erase cycles
    3.2 million block erase cycles/chip
• Low power management
    Deep power-down mode
    Automatic power saving mode decreases IC in static mode
• Automated write and erase
    Command user interface
    Status register
• ETOXTM∗ V nonvolatile flash technology
• Packages
56-pin TSOP Type I (TSOP056-P-1420) Normal bend/Reverse bend
    56-pin SSOP (SSOP056-P-0600)H
    [LH28F160S5-L]
    64-ball CSP (FBGA064-P-0811)
    64-pin SDIP (SDIP064-P-0750)H
*ETOX is a trademark of Intel Corporatio
*Under development

LH28F160S5H-L Connection Diagram

LH28F160S5H-L  Connection Diagram

LH28F160S5H-L datasheet

LH28F160S5H-L
PDF/DataSheet Download

  • Datasheet: LH28F160S5H-L
  • File Size: 375029 KB
  • Manufacturer: SHARP [Sharp Electrionic Components]
  • Click here to Download

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