MFG:SHARP D/C:98+
MFG: SHARP
D/C: 98+
Description: The LH28F160SGED-L10 Dual Work flash memory with SmartVoltage technology is a high-density low-cost, n...
The LH28F160SGED-L10 Dual Work flash memory with SmartVoltage technology is a high-density low-cost, nonvolatile, read/write storage solution fo a wide range of applications. The LH28F160SGED L10 is the highest density, highest performance non-volatile read/write solution for solid-state storage applications. LH28F160SGED-L10 can read/write/erase at VCC = 2.7 V and VPP = 2.7 V Its low voltage operation capability realizes longer battery life and suits for cellular phone application Its symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide fo highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Its enhanced suspend capabilities provide for an ideal solution fo code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F160SGED-L10 offers three levels of protection : absolute protection with VPP at GND, selective hardware block locking or flexible software block locking. These alternatives give designers ultimate control of their code security needs.
• SmartVoltage Dual Work technology
2.7 V, 3.3 V or 5 V VCC
2.7 V, 3.3 V, 5 V or 12 V VPP
Capable of performing erase, write and read for each bank independently (Impossible to perform read from both banks at a time).
• High performance read access time
100 ns (5.0±0.5 V)/100 ns (3.3±0.3 V)/ 120 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
Word write suspend to read
Block erase suspend to word write
Block erase suspend to read
• Enhanced data protection features
Absolute protection with VPP = GND
Flexible block locking
Block erase/word write lockout during power transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
Thirty-two 32 k-word erasable blocks
• Enhanced cycling capability
100 000 block erase cycles
1.6 million block erase cycles/bank
• Low power management
Deep power-down mode
Automatic power saving mode decreases Icc in static mode
• Automated word write and block erase
Command user interface
Status register
• ETOXTM* V nonvolatile flash technology
• Package
48-pin TSOP Type I (TSOP048-P-1220) Normal bend
*ETOX is a trademark of Intel Corporation.
LH28F160SGED-L10
PDF/DataSheet Download
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