MFG:SHARP Package Cooled:TSOP/56
MFG: SHARP
Package Cooled: TSOP/56
Description: The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvo...
The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Its symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F320S3TD-L10 offers three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs. LH28F320S3TD-L10 is conformed to the flash Scalable Command Set (SCS) and the Common Flash Interface (CFI) specification which enable universal and upgradable interface, enable the highest system/device data transfer rates and minimize device and system-level implementation costs.
Operating Temperature
During Read, Erase, Write and
Block Lock-Bit Configuration ... ....0 to +70(NOTE 1)
Temperature under Bias.......................10 to +80
Storage Temperature............................ 65 to +125
Voltage On Any Pin
(except VCC, VPP)......... 0.5 V to VCC+0.5 V(NOTE 2)
VCC Supply Voltage .................. 0.2 to +7.0 V (NOTE 2)
VPP Update Voltage during
Erase, Write and
Block Lock-Bit Configuration.. 0.2 to +7.0 V (NOTE 2)
Output Short Circuit Current..................100 mA (NOTE 3)
• Smart 3 Dual Work technology
2.7 V or 3.3 V VCC
2.7 V, 3.3 V or 5 V VPP
Capable of performing erase, write and read for each bank independently (Impossible to perform read from both banks at a time).
• High-speed write performance
Two 32-byte page buffers/bank
2.7 s/byte write transfer rate
• Common Flash Interface (CFI)
Universal & upgradable interface
• Scalable Command Set (SCS)
• High performance read access time
100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
Write suspend to read
Block erase suspend to write
Block erase suspend to read
• Enhanced data protection features
Absolute protection with VPP = GND
Flexible block locking
Erase/write lockout during power transitions
• SRAM-compatible write interface
• User-configurable x8 or x16 operation
• High-density symmetrically-blocked architecture
Sixty-four 64 k-byte erasable blocks
• Enhanced cycling capability
100 000 block erase cycles
3.2 million block erase cycles/bank
• Low power management
Deep power-down mode
Automatic power saving mode decreases Icc in static mode
• Automated write and erase
Command user interface
Status register
• ETOXTM* V nonvolatile flash technology
• Package
56-pin TSOP Type I (TSOP056-P-1420)
Normal bend
* ETOX is a trademark of Intel Corporation.
LH28F320S3TD-L10
PDF/DataSheet Download
This datasheet contains LH28F320BJN-PTTLZC specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4 and 5 describe the memory organization and functionality. Section 6 covers electrical specifications.
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