Purchase LH28F800SGH-L, In-stock LH28F800SGH-L From SeekIC.
MFG:SHARP D/C:05+
Part Number: LH28F800SGH-L
MFG: SHARP
D/C: 05+
Description: The LH28F800SG-L/SGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvola...
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LH28F800SGH-L
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DataSheet
General Description
LH28F800SGH-L General Description
The LH28F800SG-L/SGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800SG-L/SGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F800SG-L/SGH-L offer three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking.These alternatives give designers ultimate control of their code security needs.
LH28F800SGH-L Maximum Ratings
Operating Temperature
• LH28F800SG-L
During Read, Block Erase, Word Write,
and Lock-Bit Configuration ........ 0 to +70°C (NOTE 1)
Temperature under Bias............ 10 to +80°C
• LH28F800SGH-L
During Read, Block Erase, Word Write,
and Lock-Bit Configuration ... 40 to +85°C (NOTE 2)
Temperature under Bias............. 40 to +85°C
Storage Temperature........................ 65 to +125°C
Voltage On Any Pin
(except VCC, VPP, and RP#) .... 2.0 to +7.0 V (NOTE 3)
VCC Supply Voltage................. 2.0 to +7.0 V (NOTE 3)
VPP Update Voltage during
Block Erase, Word Write, and
Lock-Bit Configuration .... 2.0 to +14.0 V (NOTE 3, 4)
RP# Voltage with Respect to
GND during Lock-Bit
Configuration Operations.. 2.0 to +14.0 V (NOTE 3, 4)
Output Short Circuit Current .............. 100 mA (NOTE 5)
LH28F800SGH-L Features
• SmartVoltage technology
2.7 V, 3.3 V or 5 V VCC
2.7 V, 3.3 V, 5 V or 12 V VPP
• High performance read access time
LH28F800SG-L70/SGH-L70
70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)/
85 ns (3.3±0.3 V)/100 ns (2.7 to 3.0 V)
LH28F800SG-L10/SGH-L10
100 ns (5.0±0.5 V)/100 ns (3.3±0.3 V)/120 ns (2.7 to 3.0 V)
• Enhanced automated suspend options
Word write suspend to read
Block erase suspend to word write
Block erase suspend to read
• Enhanced data protection features
Absolute protection with VPP = GND
Flexible block locking
Block erase/word write lockout during power transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
Sixteen 32 k-word erasable blocks
• Enhanced cycling capability
100 000 block erase cycles
1.6 million block erase cycles/chip
• Low power management
Deep power-down mode
Automatic power saving mode decreases ICC in static mode
• Automated word write and block erase
Command user interface
Status register
• ETOXTM* V nonvolatile flash technology
• Packages
48-pin TSOP TypeI (TSOP048-P-1220)
Normal bend/Reverse bend
48-ball CSP(FBGA048-P-0808)
LH28F800SGH-L Connection Diagram
LH28F800SGH-L
PDF/DataSheet Download
- Datasheet: LH28F800SGH-L
- File Size: 329261 KB
- Manufacturer: SHARP [Sharp Electrionic Components]
- Click here to Download
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