Features: ` 2,048*8 bit organization` Access time: 100 ns (MAX.)` Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 W (MAX.)` Single +5 V power supply` Fully-static operation` TTL compatible I/O` Three-state outputs` Wide temperature range available LH5116H: -40 to +85` Packages: 24-pin, 60...
LH5116H: Features: ` 2,048*8 bit organization` Access time: 100 ns (MAX.)` Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 W (MAX.)` Single +5 V power supply` Fully-static operation` TTL compatible ...
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` 2,048*8 bit organization
` Access time: 100 ns (MAX.)
` Power consumption:
Operating: 220 mW (MAX.)
Standby: 5.5 W (MAX.)
` Single +5 V power supply
` Fully-static operation
` TTL compatible I/O
` Three-state outputs
` Wide temperature range available LH5116H: -40 to +85
` Packages:
24-pin, 600-mil DIP
24-pin, 300-mil SK-DIP
24-pin, 450-mil SOP
PARAMETER | RATING | UNIT | NOTE |
Supply voltage | 0.3 to +7.0 | V | 1 |
Input voltage | -0.3 to VCC + 0.3 | V | 2 |
Operating temperature | 0 to +70 | 3 | |
-40 to +85 | |||
Storage temperature | 55 to +150 |
The LH5116H are static RAMs organized as 2,048×8 bits. It is fabricated using silicon-gate CMOS process technology. LH5116H features high speed access in read mode using output enable (tOE).