MFG:SHARP D/C:05+
MFG: SHARP
D/C: 05+
Description: The LH532000B-1 is a CMOS 2M-bit mask-programmableROM organized as 262,144 ×8 bits (Byte mode)or 131,072×16 bits (Word ...
| PARAMETER |
SYMBOL |
RATING |
UNIT |
| Supply voltage |
Vcc |
0.3 to +7.0 |
V |
| Input voltage |
VIN |
0.3 to VCC + 0.3 |
V |
| Output voltage |
VOUT |
0.3 to VCC + 0.3 |
V |
| Operating temperature |
Topr |
0 to +70 |
|
| Storage temperature |
Tstg |
65 to +150 |
LH532000B-1
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The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word modes. It is fabricated using silicon-gate CMOS process technology.
The LH531V00 is a 1M-bit mask-programmable ROM organized as 131,072×8 bits. It is fabricated using silicon-gate CMOS process technology.
The LH5316P00B is a 16M-bit mask-programmable ROM organized as 2,097,152 ×8 bits (Byte mode) or 1,048,576 ×16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology.
The LH531024 is a mask-programmable ROM organized as 65,536×16 bits. It is fabricated using silicon-gate CMOS process technology.
The LH531000B-S is a mask-programmable ROM organized as 131,072×8 bits. It is fabricated using silicon-gate CMOS process technology.
The LH531000B is a mask-programmable ROM organized as 131,072×8 bits. It is fabricated using silicon-gate CMOS process technology.
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