Purchase LH532600, In-stock LH532600 From SeekIC.
MFG:SHARP D/C:05+
Part Number: LH532600
MFG: SHARP
D/C: 05+
Description: The LH532600 is a 2M-bit mask-programmable ROM organized as 262,144 ×8 bits (Byte mode) or 131,072×16 ...
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LH532600
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DataSheet
General Description
LH532600 General Description
The LH532600 is a 2M-bit mask-programmable ROM organized as 262,144 ×8 bits (Byte mode) or 131,072×16 bits (Word mode) that can be selected by BYTE input pin. It is fabricated using silicon-gate CMOS process technology.
LH532600 Maximum Ratings
| PARAMETER | SYMBOL | RATING | UNIT |
| Supply voltage | Vcc | 0.3 to +7.0 | V |
| Input voltage |
VIN | 0.3 to VCC + 0.3 | V |
| Output voltage |
VOUT |
0.3 to VCC + 0.3 |
V |
| Operating temperature | Topr | 0 to +70 |
|
| Storage temperature | Tstg | 65 to +150 |
LH532600 Features
` 262,144 words* 8 bit organization
(Byte mode)
131,072 words *16 bit organization
(Word mode)
` Access time: 100 ns (MAX.)
` Static operation
` TTL compatible I/O
` Three-state outputs
` Single +5 V power supply
` Power consumption:
Operating: 412.5 mW (MAX.)
Standby: 550 W (MAX.)
` Mask-programmable control pin:
Pin 1 =
` Packages:
40-pin, 600-mil DIP
40-pin, 525-mil SOP
48-pin, 10*20 mm2 TSOP (Type I)
LH532600 Connection Diagram
LH532600
PDF/DataSheet Download
- Datasheet: LH532600
- File Size: 73031 KB
- Manufacturer: SHARP [Sharp Electrionic Components]
- Click here to Download
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- ·LH5116H-10
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- ·LH5116HD-10
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- ·LH5116HN-10
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LH532600 Relative Products
LH53259
The LH53259 is a mask-programmable ROM organized as 32,768 ×8 bits. It is fabricated using silicon-gate CMOS process technology.
LH5324P00A
The LH5324P00A is a 24M-bit mask-programmable ROM organized as 3,145,728×8 bits (Byte mode) or 1,572,864×16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology.
LH5324C00
The LH5324C00 is a 24M-bit mask-programmable ROM organized as 1,572,864×16 bits. It is fabricated using silicon-gate CMOS process technology.
LH5324500
The LH5324500 is a 24M-bit mask-programmable ROM organized as 3,145,728 ×8 bits (Byte mode) or 1,572,864×16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology.
LH5324000
The LH5324000 is a 24M-bit CMOS mask-programmable ROM organized as 3,145,728× 8 bits. It is fabricated using silicon-gate CMOS process technology.
LH532100B-1
The LH532100B-1 is a CMOS 2M-bit mask-programmable ROM organized as 262,144 ×8 bits. It is fabricated using silicon-gate process technology.
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