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LLE16120X

Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very good stability of the characteristics and excellent lifetime· Multicell geometry gives goo...

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SeekIC No. : 004394439 Detail

LLE16120X: Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization real...

LLE16120X Data Sheet

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Part Number:
LLE16120X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input prematching ensures good stability and allows an easier design of wideband circuits.




Application

Intended for use in common emitter, class AB power amplifiers in CW conditions for professional applications at 1.65 GHz.




Description

LLE16120X NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.




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