LM5102

Features: ·Drives both a high side and low side N-channel MOSFET·Independently programmable high and low side rising edge delay·Bootstrap supply voltage range up to 118V DC· Fast turn-off propagation delay (25 ns typical)·Drives 1000 pF loads with 15 ns rise and fall times·Supply rail under-voltag...

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SeekIC No. : 004395963 Detail

LM5102: Features: ·Drives both a high side and low side N-channel MOSFET·Independently programmable high and low side rising edge delay·Bootstrap supply voltage range up to 118V DC· Fast turn-off propagatio...

floor Price/Ceiling Price

Part Number:
LM5102
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/2

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Product Details

Description



Features:

·Drives both a high side and low side N-channel MOSFET
·Independently programmable high and low side rising edge delay
·Bootstrap supply voltage range up to 118V DC
· Fast turn-off propagation delay (25 ns typical)
·Drives 1000 pF loads with 15 ns rise and fall times
·Supply rail under-voltage lockout
·Low power consumption
·Timer can be terminated midway through sequence




Application

·Current Fed push-pull power converters
·Half and Full Bridge power converters
·Synchronous Buck converters
·Two switch forward power converters
·Forward with Active Clamp converters




Specifications

VDD to VSS .......................................................................0.3V to +18V
VHB to VHS .......................................................................0.3V to +18V
LI or HI Inputs to VSS .............................................0.3V to VDD + 0.3V
LO Output ...............................................................0.3V to VDD + 0.3V
HO Output ........................................................VHS 0.3V to VHB + 0.3V
VHS to VSS ...........................................................................−1V to +100V
VHB to VSS .........................................................................................118V
RT1 & RT2 to VSS ....................................................................0.3V to 5V
Junction Temperature ..................................................................+150°C
Storage Temperature Range ......................................55°C to +150°C
ESD Rating HBM ..................................................................................2 kV
(Note 2)



Description

The LM5102 High Voltage Gate Driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with supply voltages up to 100V. The outputs are independently controlled.

The rising edge of each output can be independently delayed with a programming resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. This device is available in the standard MSOP-10 pin and the LLP-10 pin packages.




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