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Part Number: LMC660EP
Description: The LMC660EP CMOS Quad operational amplifier is ideal for operation from a single supply. It operates ...
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LMC660EP
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General Description
LMC660EP General Description
The LMC660EP CMOS Quad operational amplifier is ideal for operation from a single supply. It operates from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain into realistic loads (2 k and 600) are all equal to or better than widely accepted bipolar equivalents.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LMC662 datasheet for a dual CMOS operational amplifier with these same features.
LMC660EP Maximum Ratings
Differential Input Voltage.............................. ±Supply Voltage
Supply Voltage ..................................................................16V
Output Short Circuit to V+ ........................................(Note 14)
Output Short Circuit to V−.......................................... (Note 4)
Lead Temperature (Soldering, 10 sec.) .........................260°C
Storage Temp. Range ..................................−65°C to +150°C
Voltage at Input/Output Pins ............(V+) + 0.3V, (V−) − 0.3V
Current at Output Pin.................................................. ±18 mA
Current at Input Pin .......................................................±5 mA
Current at Power Supply Pin ..........................................35 mA
Power Dissipation .......................................................(Note 5)
Junction Temperature ....................................................150°C
ESD tolerance (Note 11) ................................................1000V
Supply Voltage ..................................................................16V
Output Short Circuit to V+ ........................................(Note 14)
Output Short Circuit to V−.......................................... (Note 4)
Lead Temperature (Soldering, 10 sec.) .........................260°C
Storage Temp. Range ..................................−65°C to +150°C
Voltage at Input/Output Pins ............(V+) + 0.3V, (V−) − 0.3V
Current at Output Pin.................................................. ±18 mA
Current at Input Pin .......................................................±5 mA
Current at Power Supply Pin ..........................................35 mA
Power Dissipation .......................................................(Note 5)
Junction Temperature ....................................................150°C
ESD tolerance (Note 11) ................................................1000V
LMC660EP Features
Rail-to-rail output swing
Specified for 2 k and 600 loads
High voltage gain: 126 dB
Low input offset voltage: 3 mV
Low offset voltage drift: 1.3 V/°C
Ultra low input bias current: 2 fA
Input common-mode range includes V−
Operating range from +5V to +15V supply
ISS = 375 A/amplifier; independent of V+
Low distortion: 0.01% at 10 kHz
Slew rate: 1.1 V/s
Specified for 2 k and 600 loads
High voltage gain: 126 dB
Low input offset voltage: 3 mV
Low offset voltage drift: 1.3 V/°C
Ultra low input bias current: 2 fA
Input common-mode range includes V−
Operating range from +5V to +15V supply
ISS = 375 A/amplifier; independent of V+
Low distortion: 0.01% at 10 kHz
Slew rate: 1.1 V/s
LMC660EP Typical Application
High-impedance buffer or preamplifier
Precision current-to-voltage converter
Long-term integrator
Sample-and-Hold circuit
Selected Military Applications
Selected Avionics Applications
Precision current-to-voltage converter
Long-term integrator
Sample-and-Hold circuit
Selected Military Applications
Selected Avionics Applications
LMC660EP
PDF/DataSheet Download
- Datasheet: LMC660EP
- File Size: 916548 KB
- Manufacturer: NATIONAL
- Click here to Download
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LMC660EP Relative Products
LMC660CN/NOPB
IC OP AMP QUAD CMOS 14-DIP
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LMC660CM/NOPB
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LMC660AIN/NOPB
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