LP6836

Features:

· 25 dBm Output Power at 1-dB Compression at 18 GHz
· 9.5 dB Power Gain at 18 GHz
· 55% Power-Added Efficiency


Application

·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	VDS	TAmbient = 22 ± 3		10	V
Gate-Source Voltage	VGS	TAmbient = 22 ± 3		-4	V
Drain-Source Current	IDS	TAmbient = 22 ± 3		2xIDSS	mA
Gate Current	IG	TAmbient = 22 ± 3		18	mA
RF Input Power	PIN	TAmbient = 22 ± 3		180	mW
Channel Operating Temperature	TCH	TAmbient = 22 ± 3		175
Storage Temperature	TSTG	-	-65	175
Total Power Dissipation	PTOT	TAmbient = 22 ± 3		1.4	W

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: P_TOT º (P_DC + P_IN) P_OUT, where
P_DC: DC Bias Power
P_IN: RF Input Power
P_OUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25:
P_TOT= 1.4W (0.0093W/) x T_HS
where T_HS = heatsink or ambient temperature.


Description

`The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25  m by 360 mm Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LP6836 also features Si3N4 passivation and is available in P70 and SOT343 package types.

`Typical applications include high dynamic range driver stages for commercial applications including wireless infrastructure systems and broad bandwidth amplifiers.