LP6836P70

Features:

· 23 dBm Output Power at 1-dB Compression at 15 GHz
· 11.5 dB Power Gain at 15 GHz
· 50% Power-Added Efficiency


Application

Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	VDS	TAmbient = 22 ± 3		7	V
Gate-Source Voltage	VGS	TAmbient = 22 ± 3		4	V
Drain-Source Current	IDS	TAmbient = 22 ± 3		IDSS	mA
Gate Current	IG	TAmbient = 22 ± 3		18	mA
RF Input Power	PIN	TAmbient = 22 ± 3		150	mW
Channel Operating Temperature	TCH	TAmbient = 22 ± 3		175
Storage Temperature	TSTG	-	-65	175
Total Power Dissipation	PTOT	TAmbient = 22 ± 3		1.0	W

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: P_TOT º (P_DC + P_IN) P_OUT, where
                                                    P_DC: DC Bias Power
                                                    P_IN: RF Input Power
                                                    P_OUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25 :
                                                    P<sub>TOT</sub>= 1.0W (.0036W/ ) x T<sub>HS</sub>
                                                    where T<sub>HS</sub> = heatsink or ambient temperature.
` This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.


Description

`The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25  m x 360 mm Schottky barrier gate, defined by electron-beam photolithography.

`Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance
power amplifiers.