Purchase LP6836SOT343, In-stock LP6836SOT343 From SeekIC.
Part Number: LP6836SOT343
Description: `The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility...
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LP6836SOT343
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DataSheet
General Description
LP6836SOT343 General Description
`The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic
range. It utilizes a 0.25 mm x 360 mm Schottky barrier gate, defined by electron-beam photolithography. The LP6836's active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surfacemount package.
`The LP6836SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications.
LP6836SOT343 Maximum Ratings
|
Parameter |
Symbol |
Test Conditions |
Min |
Max |
Units |
|
Drain-Source Voltage |
VDS |
TAmbient = 22 ± 3 |
|
7 |
V |
|
Gate-Source Voltage |
VGS |
TAmbient = 22 ± 3 |
|
-3 |
V |
|
Drain-Source Current |
IDS |
TAmbient = 22 ± 3 |
|
IDSS |
mA |
|
Gate Current |
IG |
TAmbient = 22 ± 3 |
|
5 |
mA |
|
RF Input Power |
PIN |
TAmbient = 22 ± 3 |
|
60 |
mW |
|
Channel Operating Temperature |
TCH |
TAmbient = 22 ± 3 |
|
175 |
|
|
Storage Temperature |
TSTG |
- |
-65 |
175 |
damage to the device.
LP6836SOT343 Features
· 0.5 dB Noise Figure at 2 GHz
· 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz
· 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz
· 70% Power-Added-Efficiency
· 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz
· 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz
· 70% Power-Added-Efficiency
LP6836SOT343 Typical Application
·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.
LP6836SOT343
PDF/DataSheet Download
- Datasheet: LP6836SOT343
- File Size: 68712 KB
- Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]
- Click here to Download
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LP6836SOT343 Relative Products
LP6836P70
`The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25m x 360 mm Schottky barrier gate, defined by electr...
LP6836P100
`The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) PseudomorphicHigh Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barriergate. The recessed "mushroom" ...
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