LP6836SOT343

Features:

· 0.5 dB Noise Figure at 2 GHz
· 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz
· 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz
· 70% Power-Added-Efficiency


Application

·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	VDS	TAmbient = 22 ± 3		7	V
Gate-Source Voltage	VGS	TAmbient = 22 ± 3		-3	V
Drain-Source Current	IDS	TAmbient = 22 ± 3		IDSS	mA
Gate Current	IG	TAmbient = 22 ± 3		5	mA
RF Input Power	PIN	TAmbient = 22 ± 3		60	mW
Channel Operating Temperature	TCH	TAmbient = 22 ± 3		175
Storage Temperature	TSTG	-	-65	175

Notes: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent
damage to the device.


Description

`The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic
range. It utilizes a 0.25 mm x 360 mm Schottky barrier gate, defined by electron-beam photolithography. The LP6836's active areas are passivated with Si₃N₄, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surfacemount package.

`The LP6836SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications.