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Part Number: LP6872
Description: `The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudom...
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LP6872
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DataSheet
General Description
LP6872 General Description
`The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 720 mm Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP6872 also features Si3N4 passivation.
`Typical applications include commercial wireless infrastructure amplifiers, such as SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.
LP6872 Maximum Ratings
|
Parameter |
Symbol |
Test Conditions |
|
Max |
Units |
|
Drain-Source Voltage |
VDS |
TAmbient = 22 ± 3 |
|
12 |
V |
|
Gate-Source Voltage |
VGS |
TAmbient = 22 ± 3 |
|
-4 |
V |
|
Drain-Source Current |
IDS |
TAmbient = 22 ± 3 |
|
2xIDSS |
mA |
|
Gate Current |
IG |
TAmbient = 22 ± 3 |
|
35 |
mA |
|
RF Input Power |
PIN |
TAmbient = 22 ± 3 |
|
300 |
mW |
|
Channel Operating Temperature |
TCH |
TAmbient = 22 ± 3 |
-65 |
175 |
|
|
Storage Temperature |
TSTG |
- |
|
175 |
|
|
Total Power Dissipation |
PTOT |
TAmbient = 22 ± 3 |
|
1.76 |
W |
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: PTOT º (PDC + PIN) POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25:
PTOT= 1.76W (0.0117W/) x THS
where THS = heatsink or ambient temperature.
LP6872 Features
· 27 dBm Output Power at 1-dB Compression at 18 GHz
· 9.5 dB Power Gain at 18 GHz
· 55% Power-Added Efficiency
· 9.5 dB Power Gain at 18 GHz
· 55% Power-Added Efficiency
LP6872 Typical Application
·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.
LP6872
PDF/DataSheet Download
- Datasheet: LP6872
- File Size: 39518 KB
- Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]
- Click here to Download
- ·LP61L1008
- AMICC [AMIC Technology]
- 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM
- 146316 KB
- ·LP61L1008A
- AMICC [AMIC Technology]
- 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM
- 121194 KB
- ·LP61L1008AS-10
- AMICC [AMIC Technology]
- 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM
- 121194 KB
- ·LP61L1008AS-12
- AMICC [AMIC Technology]
- 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM
- 121194 KB
- ·LP61L1008AS-8
- AMICC [AMIC Technology]
- 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM
- 121194 KB
- ·LP61L1008S-12
- AMICC [AMIC Technology]
- 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM
- 146316 KB
- ·LP61L1008S-15
- AMICC [AMIC Technology]
- 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM
- 146316 KB
- ·LP61L1008X-12
- AMICC [AMIC Technology]
- 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM
- 146316 KB
LP6872 Relative Products
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`The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobilitytransistor (pHEMT) intended for applications requiring medium output power and/or high dynamicrange. It utilizes a 0.25 mm x 360 mm Schottky barrier gate, defined by ele...
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`The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25m x 360 mm Schottky barrier gate, defined by electr...
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`The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) PseudomorphicHigh Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barriergate. The recessed "mushroom" ...
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