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LP722

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 150Watts 1.00 /W 200 -65 to 150 15.0A 50V 50V...

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LP722: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolta...

LP722 Data Sheet

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Part Number:
LP722
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Total
Device
Dissipation

Junction to
Case Thermal
Resistance

Maximum
Junction
Temperature

Storage
Temperature

DC Drain
Current

Drain to
Gate
Voltage

Drain to
Source
Voltage

Gate to
Source
Voltage

150Watts

1.00 /W

200

-65 to 150

15.0A

50V

50V

20V






Description

·Silicon VDMOS and LDMOS transistors LP722 designed specifically for broadband RF applications.

·Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

·"Polyfet" TMprocess features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.




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