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Part Number: LPC660
Description: `The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It f...
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LPC660
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DataSheet
General Description
LPC660 General Description
`The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kW and 5 kW) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW.
`This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
`See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features.
LPC660 Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage ±Supply Voltage
Supply Voltage (V+ − V−) 16V
Output Short Circuit to V+ (Note 11)
Output Short Circuit to V− (Note 1)
Lead Temperature
(Soldering, 10 sec.) 260
Storage Temp. Range −65 to +150
Junction Temperature (Note 2) 150
ESD Rating
(C = 100 pF, R = 1.5 kW) 1000V
Power Dissipation (Note 2)
Current at Input Pin ±5 mA
Current at Output Pin ±18 mA
Voltage at Input/Output Pin (V+) + 0.3V, (V−) − 0.3V
Current at Power Supply Pin 35 mA
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage ±Supply Voltage
Supply Voltage (V+ − V−) 16V
Output Short Circuit to V+ (Note 11)
Output Short Circuit to V− (Note 1)
Lead Temperature
(Soldering, 10 sec.) 260
Storage Temp. Range −65 to +150
Junction Temperature (Note 2) 150
ESD Rating
(C = 100 pF, R = 1.5 kW) 1000V
Power Dissipation (Note 2)
Current at Input Pin ±5 mA
Current at Output Pin ±18 mA
Voltage at Input/Output Pin (V+) + 0.3V, (V−) − 0.3V
Current at Power Supply Pin 35 mA
LPC660 Features
` Rail-to-rail output swing
` Micropower operation: (1 mW)
` Specified for 100 kW and 5 kW loads
` High voltage gain: 120 dB
` Low input offset voltage: 3 mV
` Low offset voltage drift: 1.3 V/
` Input common-mode includes V−
` Operation range from +5V to +15V
` Low distortion: 0.01% at 1 kHz
` Slew rate: 0.11 V/s
` Full military temp. range available
` Micropower operation: (1 mW)
` Specified for 100 kW and 5 kW loads
` High voltage gain: 120 dB
` Low input offset voltage: 3 mV
` Low offset voltage drift: 1.3 V/
` Input common-mode includes V−
` Operation range from +5V to +15V
` Low distortion: 0.01% at 1 kHz
` Slew rate: 0.11 V/s
` Full military temp. range available
LPC660 Typical Application
· High-impedance buffer
· Precision current-to-voltage converter
· Long-term integrator
· High-impedance preamplifier
· Active filter
·Sample-and-Hold circuit
·Peak detector
· Precision current-to-voltage converter
· Long-term integrator
· High-impedance preamplifier
· Active filter
·Sample-and-Hold circuit
·Peak detector
LPC660 Connection Diagram
LPC660
PDF/DataSheet Download
- Datasheet: LPC660
- File Size: 618362 KB
- Manufacturer: NSC [National Semiconductor]
- Click here to Download
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