LPD200SOT343

Features:

· 0.6 dB Noise Figure at 2 GHz
· 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz
· 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz
· 50% Power-Added-Efficiency at 2 GHz


Application

Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	VDS	TAmbient = 22 ± 3		7	V
Gate-Source Voltage	VGS	TAmbient = 22 ± 3		-3	V
Drain-Source Current	IDS	TAmbient = 22 ± 3		IDSS	mA
Gate Current	IG	TAmbient = 22 ± 3		5	mA
RF Input Power	PIN	TAmbient = 22 ± 3		60	mW
Channel Operating Temperature	TCH	TAmbient = 22 ± 3		175
Storage Temperature	TSTG	-	-65	175

Notes: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent
damage to the device.


Description

`The LPD200SOT343 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200's active areas are passivated with Si₃N₄, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-mount package.

`The LPD200SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications.