LPT16ED

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Noise Figure (dB Typ @ f): -
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 4V
Package / Case: Die
Supplier Device Package: Die
Manufacturer: Skyworks Solutions Inc
Frequency - Transition: 16GHz
Gain: 5.2dB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 2V
Packaging: Tray - Waffle


Features:

·Low 1/f noise: -142 dBc/Hz at 100 Hz offset
· Phase noise: -167 dBc/Hz at 100 kHz offset
·Output power up to +13 dBm
·Operation down to 1 volt, 2 mA
·Gold bump pads for wire bond or flip chip (for direct die attachment)


Application

`Low phase noise oscillators up to 16 GHz
` VCO's, DRO's and YIG oscillators
` Point-to-point radios
` Satellite communications
`Fiber optics, OC-192 and OC-768
` Local Multipoint Distribution Systems, LMDS


Specifications

Symbol	Parameter	Min.	Max.	Unit
VCBO	Collector to Base Voltage		+13.0	V
VCEO	Collector to Emitter Voltage		+4.0	V
VEBO	Emitter to Base Voltage		+1.5	V
IC	Collector Current		80	mA
IB	Base Current		2.0	mA
PT	Total Power Dissipation		250	mW
Tj	Junction Temperature		+150
TSTG	Storage Temperature	-65	+150

Description

·The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz.
·The LPT16ED exhibits low 1/f noise and provides +13 dBm typical output power at VCE of 3V and IC equal to 20 mA. It is easily operated from a single supply voltage with appropriate external passive components.
·The silicon germanium technology used in this device provides outstanding high-frequency performance combined with high thermal conductivity and superior reliability under harsh operating and storage conditions.
·A complete mechanical description of the transistor is available under SiGe Semiconductor Document 07MS001.