LTAI04S2-L01

The LTAI04S2-L01 is designed as one kind of high-speed 134,217,728 bits synchronous dynamic random-access memory that has some points of features:(1)Fully Synchronous Dynamic RAM with all input signals except DM, DQS and DQ referenced to a positive clock edge;(2)Differential CLK (/CLK) input;(3)Quad internal banks operation;(4)Possible to assert random column address in every clock cycle;(5)Programmable Mode register set;(6)Automatic precharge and controlled precharge;(7)CBR (Auto) refresh and self refresh;(8)Burst termination by Precharge command and Burst stop command;(9)66-pin Plastic TSOP (II) (10.16 mm (400));(10)4,096 refresh cycles/64 ms;(11)2.5 V ± 0.2 V Power supply for VDDQ;(12)Byte write control (x16) by LDM and UDM.

The absolute maximum ratings of the LTAI04S2-L01 can be summarized as:(1)Voltage on power supply pin relative to VSS: -0.5 to +3.6 V;(2)Voltage on any pin relative to VSS: -0.5 to +3.6 V;(3)Short circuit output current: 50 mA;(4)Power dissipation: 1 W;(5)Storage temperature: -55 to +125 °C.

The electrical characteristics of the LTAI04S2-L01 can be summarized as:(1)Supply voltage: 2.3 to 2.7 V;(2)Supply voltage for DQ, DQS: 2.3 to 2.7 V;(3)Input reference voltage: 0.49 * VDDQ to 0.51 * VDDQ V;(4)Termination voltage: VREF-0.04 to VREF+0.04 V;(5)High level dc input voltage: VREF+0.18 to VDD+0.3 V;(6)Low level dc input voltage: -0.3 to VREF-0.18 V;(7)Input differential voltage (CLK and /CLK): 0.36 to VDDQ+0.6 V;(8)Input crossing point voltage (CLK and /CLK): 0.5 * VDDQ0.2 to 0.5 * VDDQ+0.2 V;(9)Operating ambient temperature:0 to 70 °C. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.