MFG:LITEON Package Cooled:. D/C:07+
MFG: LITEON
Package Cooled: .
D/C: 07+
Description: The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared em...
The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emitting
diodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps.
|
PARAMETER |
MAXIMUM RATING |
UNIT |
|
Power Dissipation Per Segment |
150 |
mW |
|
Peak Forward Current Per Segment ( Frequency 1Khz, 10% duty cycle) |
2 |
A |
|
Continuous Forward Current Per Segment Derating Linear From 25 Per Segment |
100 |
V |
|
Reverse Voltage Per Segment |
5 |
V |
|
Operating Temperature Range |
-40 to +85 | |
|
Storage Temperature Range |
-55 to +100 | |
|
Lead Soldering Temperature [1.6mm(.063") From Body] |
260 for 5 Seconds | |
LTE-3371T
PDF/DataSheet Download
The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emittingdiodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps.
The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emittingdiodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps.
EMITTER IR 940NM CLEAR SIDE LOOK
The LTE-2871 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. The LTE-2871 series provides a broad range of intensity selection. Suffix C-smoke color lens.
The LTE-2871 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. The LTE-2871 series provides a broad range of intensity selection. Suffix C-smoke color lens.
LTE21025R, NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
Price: 1.45-1.5 USD
single chip mixer oscillator, SOP-28, -0.3 to 7 V, 700 mW
Price: 0.04-0.05 USD
Chip Inductor, SMD, 5.1nH, 600mA, 8GHz, LQW15AN5N1C00D, Murata
Price: 4.98-19.99 USD
Operational Amplifier, Ultralow input bias current, Low offset voltage, 20 μV/℃ offset drift
Price: 2-2.5 USD
Programmable Logic Device Family, PLCC, High-performance, 5.0-V in-system programmability, -25 to ...
Price: 0.0286-0.0365 USD
400W, surface mount, Unidirectional transient voltage, suppressor, 58V, DO-214AC/SMA, 5%
Price: 6.5-9 USD
IBM25PPC405GP-3DE266C, BGA, IBM
Price: 5-10 USD
printing/display calculator circuit, -0.5~7 V, DIP42, Single-Chip CMOS LSI
Price: 20-21 USD
DSP controller, Four Capture Units, Scan-Based Emulation, Six External Interrupts, BQFP, 50ns
Price: 0.001-5 USD
Precision Thick Film Chip Resistor, SMD, High reliability, Low Resistance Tolerance, 50V, 3.6kΩ
Price: 1.4-1.8 USD
single-stage GaAs HBT, power amplifier, 0.5W, 400MHz to 2700MHz, SOT-89
Price: 0.001-5 USD
SMT, 22UF, 10V, GRM235Y5V226Z10T, Murata Manufacturing Co., Ltd.
Price: 30-32 USD
D-MOS push-pull transistor, SOT540, 65 V, 18 A, High power gain, Easy power control
