Purchase LTE-4208, In-stock LTE-4208 From SeekIC.
MFG:LITEON D/C:06+
- Table of contents:
LTE-4208
-
Suppliers
DataSheet
General Description
LTE-4208 Maximum Ratings
|
PARAMETER |
MAXIMUM RATING |
UNIT |
|
Power Dissipation Per Segment |
100 |
mW |
|
Peak Forward Current Per Segment ( Frequency 1Khz, 10% duty cycle) |
3 |
A |
|
Continuous Forward Current Per Segment Derating Linear From 25 Per Segment |
50 |
V |
|
Reverse Voltage Per Segment |
5 |
V |
|
Operating Temperature Range |
-35 to +85 | |
|
Storage Temperature Range |
-35 to +85 | |
|
Lead Soldering Temperature [1.6mm(.063") From Body] |
260 for 5 Seconds | |
LTE-4208 Features
* SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES
* LOW COST MINIATURE PLASTIC END LOOKING PACKAGE
* MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR-3208 SERIES OF PHOTOTRANSISTOR
* CLEAR TRANSPARENT COLOR PACKAGE
* LOW COST MINIATURE PLASTIC END LOOKING PACKAGE
* MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR-3208 SERIES OF PHOTOTRANSISTOR
* CLEAR TRANSPARENT COLOR PACKAGE
LTE21009
PDF/DataSheet Download
- Datasheet: LTE21009
- File Size: 57063 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
- ·LTE21009R
- PHILIPS [Philips Semiconductors]
- NPN microwave power transistor
- 57063 KB
- ·LTE21015R
- PHILIPS [Philips Semiconductors]
- NPN microwave power transistor
- 73367 KB
- ·LTE21025R
- PHILIPS [Philips Semiconductors]
- NPN microwave power transistor
- 53044 KB
- ·LTE-2871
- LITEON [Lite-On Technology Corporation]
- GaAlAs T-1 3/4 Modified Infrared Emitting Diode
- 279944 KB
- ·LTE-3271T
- LITEON [Lite-On Technology Corporation]
- GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
- 277508 KB
- ·LTE-3271TL
- LITEON [Lite-On Technology Corporation]
- GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
- 277508 KB
- ·LTE-3371T
- LITEON [Lite-On Technology Corporation]
- GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
- 277508 KB
- ·LTE-3371TL
- LITEON [Lite-On Technology Corporation]
- GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
- 277508 KB
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The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emittingdiodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps.
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