Purchase LTE4206, In-stock LTE4206 From SeekIC.
MFG:LITEON
- Table of contents:
LTE4206
-
Suppliers
DataSheet
General Description
LTE4206 Maximum Ratings
|
PARAMETER |
MAXIMUM RATING |
UNIT |
| Power Dissipation |
90 |
mW |
| Peak Forward Current (300pps, 10 s pulse) |
1 |
A |
| Continuous Forward Current |
60 |
mA |
| Reverse Voltage |
5 |
V |
| Operating Temperature Range |
-40 to + 85 | |
| Storage Temperature Range |
-55 to + 100 | |
| Lead Soldering Temperature [1.6mm(.063") From Body] |
260 for 5 Seconds | |
LTE4206 Features
· SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES
· LOW COST MINIATURE PLASTIC END LOOKING PACKAGE
· MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR-4206 SERIES OF PHOTOTRANSISTOR
·CLEAR TRANSPARENT COLOR PACKAGE
· LOW COST MINIATURE PLASTIC END LOOKING PACKAGE
· MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR-4206 SERIES OF PHOTOTRANSISTOR
·CLEAR TRANSPARENT COLOR PACKAGE
LTE4206
PDF/DataSheet Download
- Datasheet: LTE4206
- File Size: 106300 KB
- Manufacturer: LITEON [Lite-On Technology Corporation]
- Click here to Download
- ·LTE21009
- PHILIPS [Philips Semiconductors]
- NPN microwave power transistor
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- ·LTE21009R
- PHILIPS [Philips Semiconductors]
- NPN microwave power transistor
- 57063 KB
- ·LTE21015R
- PHILIPS [Philips Semiconductors]
- NPN microwave power transistor
- 73367 KB
- ·LTE21025R
- PHILIPS [Philips Semiconductors]
- NPN microwave power transistor
- 53044 KB
- ·LTE-2871
- LITEON [Lite-On Technology Corporation]
- GaAlAs T-1 3/4 Modified Infrared Emitting Diode
- 279944 KB
- ·LTE-3271T
- LITEON [Lite-On Technology Corporation]
- GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
- 277508 KB
- ·LTE-3271TL
- LITEON [Lite-On Technology Corporation]
- GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
- 277508 KB
- ·LTE-3371T
- LITEON [Lite-On Technology Corporation]
- GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
- 277508 KB
LTE4206 Relative Products
LTE42012R
LTE42012R, NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
LTE42008R
LTE42008R,NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
LTE42005S
LTE42005S, NPN silicon planar epitaxial microwave power transistor IN a SOT440A metal ceramic flange package with the emitter connected to the flange.
LTE-3371TL
The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emittingdiodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps.
LTE-3371T
The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emittingdiodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps.
LTE-3271TL
The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emittingdiodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps.
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