Photodetector Transistors Phototrans Filtered
LTR-4206E: Photodetector Transistors Phototrans Filtered
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| Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 100 nA |
| Package / Case : | T-1 |
| Parameter | Maximum Rating | Unit |
| Power Dissipation | 100 | mW |
| Collector-Emitter Voltage | 30 | V |
| Emitter-Collector Voltage | 5 | V |
| Operating Temperature Range | -40 to +85 | |
| Storage Temperature Range | -55 to +100 | |
| Lead Soldering Temperature [1.6mm (.063 in.) from body] |
260 for 5 Seconds | |
The LTR-4206 series consist of a NPN silicon phototransistor mounted in a lensed, clear plastic, end looking package. The lensing effect of the package allows an acceptance half angle of 10° measured from the optical axis to the half power point. This series is mechanically and spectrally matched to the LTE-4206 series of infrared emitting diodes. The LTR-4206E is a special dark plastic package that cut the visible light and suitable for the detectors of infrared application.
| Technical/Catalog Information | LTR-4206E |
| Vendor | Lite-On Inc |
| Category | Sensors, Transducers |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 4.8mA |
| Current - Dark (Id) (Max) | 100nA |
| Power - Max | 100mW |
| Orientation | Top View |
| Mounting Type | Through Hole |
| Package / Case | T-1 |
| Wavelength | 940nm |
| Viewing Angle | 20° |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | LTR 4206E LTR4206E 160 1030 ND 1601030ND 160-1030 |