MFG:TO251 Package Cooled:3200 D/C:LOVOL
MFG: TO251
Package Cooled: 3200
D/C: LOVOL
Description: The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved e...
The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. A PN Diode is added for applications where a freewheeling diode is required. This product has tin plated leads.
|
PARAMETER |
Symbol |
Ratings |
Units | |
| Drain-Source Voltage |
VDS |
24 |
V | |
| Gate-Source Voltage |
VGS |
-12 |
V | |
| Gate-Drain Voltage |
VGD |
-28 |
V | |
| Continuous Drain Current |
ID |
501 |
A | |
| Pulsed Drain Current |
ID |
100 |
A | |
| Single Pulse Drain-to-Source Avalanche Energy at 25 VDD= 6VDC, IL=60APK, L=0.3mH, RG=100 Ω) |
EAS |
200 |
mJ | |
| Junction Temperature |
TJ |
-55 to 150 |
||
| Storage Temperature |
TSTG |
-65 to 150 |
||
| Lead Soldering Temperature, 10 seconds |
T |
260 |
||
| Power Dissipation (Derated at 25) |
PD |
69 |
W | |
LU1014D
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