Purchase LV1721E50R, In-stock LV1721E50R From SeekIC.
Part Number: LV1721E50R
Description: NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with...
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LV1721E50R
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DataSheet
General Description
LV1721E50R General Description
NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange.
LV1721E50R Maximum Ratings
|
Parameter |
Min |
Symbol |
Max |
Unit |
|
collector-base voltage |
30 |
V CBO |
40 |
V |
|
collector-emitter voltage |
65 |
V CER |
20 |
V |
|
collector-emitter voltage |
- |
V CEO |
15 |
V |
|
emitter-base voltage |
0 |
V EBO |
3 |
V |
|
collector current (DC) |
0 |
IC |
2 |
A |
|
total power dissipation
|
P tot |
18 |
W | |
storage temperature |
- |
T stg |
+200 |
°C |
operating junction temperature |
Vss 0.3 |
T j |
200 |
°C |
LV1721E50R Features
· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.
· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.
LV1721E50R Typical Application
· Common emitter class-A amplifiers in CW conditions for military and professional applications in the 1.7 GHz to
2.1 GHz band.
2.1 GHz band.
LV1721E50R
PDF/DataSheet Download
- Datasheet: LV1721E50R
- File Size: 62522 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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