Position: Home  > All Categories> Integrated Circuits (ICs) > LV1721E50R

LV1721E50R

Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry gives good balance of diss...

product image

LV1721E50R Picture
See larger image
SeekIC No. : 004403062 Detail

LV1721E50R: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR· Gold metallization realiz...

LV1721E50R Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
LV1721E50R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/18

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.


Application

· Common emitter class-A amplifiers in CW conditions for military and professional applications in the 1.7 GHz to
2.1 GHz band.


Specifications

Parameter
Min
Symbol
Max
Unit
collector-base voltage
30
V CBO
40
V
collector-emitter voltage
65
V CER
20
V
collector-emitter voltage
-
V CEO
15
V
emitter-base voltage
0
V EBO
3
V
collector current (DC)
0
IC
2
A
total power dissipation
P tot
18
W
storage temperature
-
T stg
+200
°C
operating junction temperature
Vss 0.3
T j
200
°C



Description

NPN silicon planar epitaxial microwave power transistor LV1721E50R in a SOT445A metal ceramic flange package with the emitter connected to the flange.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Audio Products
HUC1002
WM-64CT
Undefined Category
VI-B63-IU
X27 589
Filters
PICO2205A
PICO2204A
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
View more