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Part Number: LV2327E40R

 

 

 

 

Description: NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connect...


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LV2327E40R General Description


NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange.

LV2327E40R Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX.
UNIT
VCBO collector-base voltage open emitter - 40 V
VCER collector-emitter voltage open base - 15 V
VCBO collector-emitter voltage RBE = 47W - 30 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC)   - 2 A
Ptot total power dissipation Tmb £ 75 °C - 18 W
Tstg storage temperature   -65 +200 °C
Tj operating junction temperature   - 200 °C
Tsld soldering temperature t £ 10 s; note 1 - 235 °C

LV2327E40R Features

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellentlifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.
· Input and output matching cell improves the impedances and facilitates the design of wideband circuits.

LV2327E40R Typical Application

Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band.

LV2327E40R datasheet

LV2327E40R
PDF/DataSheet Download

  • Datasheet: LV2327E40R
  • File Size: 48715 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

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