Position: Home  > All Categories> Integrated Circuits (ICs) > LV2327E40R

LV2327E40R

Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellentlifetime· Multicell geometry gives good balance of dis...

product image

LV2327E40R Picture
See larger image
SeekIC No. : 004403086 Detail

LV2327E40R: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization real...

LV2327E40R Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
LV2327E40R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellentlifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.
· Input and output matching cell improves the impedances and facilitates the design of wideband circuits.


Application

Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX.
 UNIT
VCBO collector-base voltage open emitter - 40 V
VCER collector-emitter voltage open base - 15 V
VCBO collector-emitter voltage RBE = 47W - 30 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC)   - 2 A
Ptot total power dissipation Tmb £ 75 °C - 18 W
Tstg storage temperature   -65 +200 °C
Tj operating junction temperature   - 200 °C
Tsld soldering temperature t £ 10 s; note 1 - 235 °C



Description

NPN silicon planar epitaxial microwave power transistor LV2327E40R in a SOT445B metal ceramic flange package, with emitter connected to the flange.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Prototyping Products
AVT4168
DE1
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Isolators
HCPL062N
HCPL316J
View more