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LWE2010S

Features: · Diffused emitter ballasting resistors providing excellent current sharingand withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very good stability of the characteristics and excellent lifetime· Multicell geometry gives good...

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SeekIC No. : 004403385 Detail

LWE2010S: Features: · Diffused emitter ballasting resistors providing excellent current sharingand withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization reali...

LWE2010S Data Sheet

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Part Number:
LWE2010S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Diffused emitter ballasting resistors providing excellent current sharingand withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.


Application

Common emitter class A power amplifiers at frequencies up to 2.3 GHz.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCER collector-emitter voltage RBE =250W - 20 V
VCEO emitter-base voltage open base - 16 V
VEBO emitter-base voltage open collector - 3 V
IC DC collector current (DC)   - 250 mA
Ptot total power dissipation Tmb<= 75 °C - 4.8 W
Tstg storage temperature   -65 +200 °C
Tj operating junction temperature   - 200 °C
Tsld soldering temperature t £ 10 s; note 1 - 235 °C



Description

LWE2010S,NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic flange package, with emitter connected to flange.


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