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Part Number: LX1214E500X

 

 

 

 

Description: NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, wit...


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LX1214E500X General Description


NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with emitter connected to flange.

LX1214E500X Maximum Ratings

Parameter
Symbol
Conditions

Min.
Max.
Units
collector-base voltage
VCBO
open emitter
 -
45
V
collector-emitter voltage
VCER
RBE = 220W
-
30
V
collector-emitter voltage
VCEO
open base
-
25
V
emitter-base voltage
 VEBO
open collector
-
3
V
collector current (DC)
IC
-
9
A
input power
Pi
f = 1.2 to 1.4 GHz; VCC = 24 V; class AB
-
7
W
total power dissipation
Ptot
Tmb = 75 °C
-
70
W
storage temperature
Tstg
-65
+200
°C
junction temperature
Tj
-
200
°C
soldering temperature
Tsld
t £ 10 s; note 1
-
235
°C

LX1214E500X Features

· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits.

LX1214E500X Typical Application

Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between
1.2 and 1.4 GHz.

LX1214E500X datasheet

LX1214E500X
PDF/DataSheet Download

  • Datasheet: LX1214E500X
  • File Size: 85624 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

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