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LXE15450X

Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated common-emitter structure provides high emitter efficiency· Gold metallization realizes very good stability of the characteristics and excellent lifetime· Multicell geo...

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SeekIC No. : 004403583 Detail

LXE15450X: Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated common-emitter structure provides high emitter efficiency· Gold met...

LXE15450X Data Sheet

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Part Number:
LXE15450X
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated common-emitter structure provides high emitter efficiency
· Gold metallization realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures a good stability and allows an easier design of circuits.




Application

Intended for use in common-emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz and 1.7 GHz.




Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 45 V
VCER collector-emitter voltage RBE = 220 - 30 V
VCEO collector-emitter voltage open base - 25 V
VEBO emitter-base voltage open collector - 3 V

IC

 collector current (DC)   - 9 A
Pi input power f =1.5GHz;VCE =24V;class AB - 12 W
Ptot total power dissipation Tmb=75 - 70 W
Tstg storage temperature   -65 +200
Tj junction temperature   - 200
Tsld soldering temperature t10s;note1 - 235



Description

NPN silicon planar epitaxial microwave power transistor LXE15450X in a SOT439A metal ceramic flange package, with emitter connected to flange.




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