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LZ1418E100R

Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry gives good balance of diss...

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SeekIC No. : 004403754 Detail

LZ1418E100R: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR· Gold metallization realiz...

LZ1418E100R Data Sheet

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Part Number:
LZ1418E100R
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.


Application

·Common emitter class A amplifiers in CW conditions for military and professional applications between 1.4 to 1.8 GHz. 




Specifications

SYMBO
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 45 V
VCER collector-emitter voltage RBE = 220 - 30 V
VCEO collector-emitter voltage open base - 20 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC)   - 4 A
Ptot total power dissipation Tmb 75 °C - 45 W
Tstg storage temperature   -65 +200
Tj operating junction temperature   - 200
Tsld operating junction temperature at 0.2 mm from ange;
t 10 s		 - 235



Description

NPN silicon planar epitaxial microwave power transistor LZ1418E100R in a SOT443A metal ceramic flange package with the emitter connected to the flange.




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