These devices M0C263consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. No base connection for improved noise immunity.
The M02N60B is a N Channel MOSFET.
Features of the M02N60B are:(1)Robust High Voltage Temination; (2)Avalanche Energy Specified; (3)Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; (4)Diode is Characterized for Use in Bridge...