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Part Number: M24C04,

 

 

 

 

Description: These I2C-compatible electrically erasable programmable memory (EEPROM) devices are organiz...


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M24C04, General Description


These I2C-compatible electrically erasable programmable memory (EEPROM) devices are organized as 2048/1024/512/256/128 x 8 (M24C16, M24C08, M24C04, M24C02, M24C01).

These devices are compatible with the I2C memo-ry protocol. This is a two wire serial interface that uses a bi-directional data bus and serial clock. The devices carry a built-in 4-bit Device Type Identifier code (1010) in accordance with the I2C bus defini-tion.

The device behaves as a slave in the I2C protocol,with all memory operations synchronized by the serial clock. Read and Write operations are initiat-ed by a Start condition, generated by the bus mas-ter. The Start condition is followed by a Device Select Code and RW bit (as described in Table 2),terminated by an acknowledge bit.

When writing data to the memory, the device in- serts an acknowledge bit during the 9th bit time,following the bus master's 8-bit transmission.

When data is read by the bus master, the bus master acknowledges the receipt of the data byte in the same way. Data transfers are terminated by a Stop condition after an Ack for Write, and after a NoAck for Read.

M24C04, Maximum Ratings

Symbol Parameter Min. Value Unit
TSTG Storage Temperature 65 150
TLEAD Lead Temperature during
Soldering
PDIP: 10 seconds
SO: 20 seconds (max) 1
TSSOP: 20 seconds (max) 1
260
235
235
VIO Input or Output range
-0.6 6.5 V
VCC Supply Voltage
-0.3 6.5 V
VESD Electrostatic Discharge Voltage (Human Body model) 2 -4000 4000 V
Note: 1. IPC/JEDEC J-STD-020A
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω)

M24C04, Features

` Two Wire I2C Serial Interface Supports 400 kHz Protocol
` Single Supply Voltage:
4.5V to 5.5V for M24Cxx
2.5V to 5.5V for M24Cxx-W
2.2V to 5.5V for M24Cxx-L
1.8V to 5.5V for M24Cxx-R
` Write Control Input
` BYTE and PAGE WRITE (up to 16 Bytes)
` RANDOM and SEQUENTIAL READ Modes
` Self-Timed Programming Cycle
` Automatic Address Incrementing
` Enhanced ESD/Latch-Up Behavior
` More than 1 Million Erase/Write Cycles
` More than 40 Year Data Retention

M24C04, Connection Diagram

M24C04,  Connection Diagram

M24C04, datasheet

M24.173B
PDF/DataSheet Download

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