MFG:ST Package Cooled:DIP D/C:00+
MFG: ST
Package Cooled: DIP
D/C: 00+
Description: The M28010 devices consist of 128Kx8 bits of low power, parallel EEPROM, fabricated with STMicroelectr...
The M28010 devices consist of 128Kx8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics' proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply (5V, 3V or 2V, depending on the option chosen).
|
Symbol |
Parameter |
Value |
Unit |
| TA | Ambient Operating Temperature |
40 to 85 |
|
| TSTG | Storage Temperature |
65 to 150 |
|
| VCC | Supply Voltage |
0.3 to VCCMAX+1 |
V |
| VIO | Input/Output Voltage |
0.3 to VCC+0.6 |
V |
| VI | Input Voltage |
0.3 to 4.5 |
V |
| VESD | Electrostatic Discharge Voltage (Human Body model) (3) |
2000 |
V |
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the ST SURE Program and other relevant quality documents.
2. MIL-STD-883C, 3015.7 (100 pF, 1500 )
M28010
PDF/DataSheet Download
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