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Part Number: M28W160CT
Description: The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at t...
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M28W160CT
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General Description
M28W160CT General Description
The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.
The device features an asymmetrical blocked architecture. The M28W160C has an array of 39 blocks: 8 Parameter Blocks of 4 KWord and 31 Main Blocks of 32 KWord. M28W160CT has the Parameter Blocks at the top of the memory address space while the M28W160CB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 5, Block Addresses
M28W160CT Maximum Ratings
| Symbol | Parameter | Value | Unit | |
| Min | Max | |||
| TA | Ambient Operating Temperature (1) | -40 | 85 | °C |
| TBIAS | Temperature Under Bias | -40 | 125 | °C |
| TSTG | Storage Temperature | -55 | 125 | °C |
| VIO(2,3) | Input or Output Voltage | -0.6 | VDDQ+0.6 | V |
| VDD, VDDQ | Supply Voltage | -0.6 | 4.1 | V |
| VPP | Program Voltage | -0.6 | 1.3 | V |
2. The minimum voltage may undershoot to −2V during transition and for less than 20ns during transitions.
3. The maximum voltage may overshoot to Vcc + 2V during transition and for less than 20ns during transitions
M28W160CT Connection Diagram
M28W160CT
PDF/DataSheet Download
- Datasheet: M28W160CT
- File Size: 806954 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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M28W160CB
The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ all...
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M28W160BB
The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ all...
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