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Part Number: M28W640ECT
Description: The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and pr...
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M28W640ECT
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General Description
M28W640ECT General Description
The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.
The device features an asymmetrical blocked architecture. The M28W640EC has an array of 135 blocks: 8 Parameter Blocks of 4 KWord and 127 Main Blocks of 32 KWord. M28W640ECT has the Parameter Blocks at the top of the memory address space while the M28W640ECB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 5, Block Addresses.
The M28W640EC features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is an additional hardware protection against program and erase. When VPP ? VPPLK all blocks are protected against program or erase. All blocks are locked at Power Up.
Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles. The device includes a 192 bit Protection Register to increase the protection of a system design. The Protection Register is divided into a 64 bit segment and a 128 bit segment. The 64 bit segment contains a unique device number written by ST, while the second one is one-time-programmable by the user. The user programmable segment can be permanently protected. Figure 6, shows the Protection Register Memory Map.
Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
M28W640ECT Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
Min |
Max | |||
| TA | Ambient Operating Temperature (1) |
40 |
85 |
°C |
| TBIAS | Temperature Under Bias |
40 |
125 |
°C |
| TSTG | Storage Temperature |
55 |
155 |
°C |
| VIO | Input or Output Voltage |
0.6 |
VDDQ+0.6 |
V |
| VDD, VDDQ | Supply Voltage |
0.6 |
4.1 |
V |
| VPP | Program Voltage |
0.6 |
13 |
V |
M28W640ECT Features
`SUPPLY VOLTAGE
VDD = 2.7V to 3.6V Core Power Supply
VDDQ= 1.65V to 3.6V for Input/Output
VPP = 12V for fast Program (optional)
`ACCESS TIME: 70, 85, 90,100ns
`PROGRAMMING TIME:
10s typical
Double Word Programming Option
Quadruple Word Programming Option
`COMMON FLASH INTERFACE
`MEMORY BLOCKS
Parameter Blocks (Top or Bottom location)
Main Blocks
`BLOCK LOCKING
All blocks locked at Power Up
Any combination of blocks can be locked
WP for Block Lock-Down
`SECURITY
128 bit user Programmable OTP cells
64 bit unique device identifier
`AUTOMATIC STAND-BY MODE
`PROGRAM and ERASE SUSPEND
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M28W640ECT: 8848h
Bottom Device Code, M28W640ECB: 8849h
VDD = 2.7V to 3.6V Core Power Supply
VDDQ= 1.65V to 3.6V for Input/Output
VPP = 12V for fast Program (optional)
`ACCESS TIME: 70, 85, 90,100ns
`PROGRAMMING TIME:
10s typical
Double Word Programming Option
Quadruple Word Programming Option
`COMMON FLASH INTERFACE
`MEMORY BLOCKS
Parameter Blocks (Top or Bottom location)
Main Blocks
`BLOCK LOCKING
All blocks locked at Power Up
Any combination of blocks can be locked
WP for Block Lock-Down
`SECURITY
128 bit user Programmable OTP cells
64 bit unique device identifier
`AUTOMATIC STAND-BY MODE
`PROGRAM and ERASE SUSPEND
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M28W640ECT: 8848h
Bottom Device Code, M28W640ECB: 8849h
M28W640ECT Connection Diagram
M28W640ECT
PDF/DataSheet Download
- Datasheet: M28W640ECT
- File Size: 692180 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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