M28W640ECT85N6

Features of the M28W640ECT85N6 are:(1)supply voltage;(2)access time is 70,85,90,100ns;(3)programming time 10s/byte;(4)common flash interface;(5)memory blocks;(6)block locking;(7)secuity;(8)automatic stan-by mode;(9)program and erase suspend;(11)100,000 program/erase cycles per block;(12)electronic signature.

The absolute maximum ratings of the M28W640ECT85N6 can be summarized as:(1):the symbol is TA,the parameter is ambient operating temperature,the rating is -40 to 85,the unit is ;(2):the symbol is TBIAS,the parameter is temperature under bias,the rating is -40 to 125,the unit is ;(3):the symbol is TSTG,the parameter is storage temperature ,the rating is -55 to 155,the unit is ;(4):the symbol is VIO,the parameter is input or output voltage,the rating is -0.6 to VDDQ+0.6,the unit is V;(5):the symbol is VDD,VDDQ,the parameter M28W640ECT85N6 is supply voltage,the rating is -0.6 to 4.1,the unit is V;(6):the symbol is Vpp,the parameter is program supply voltage,the rating is -0.6 to 13,the unit is V.