M29DW324DT General Description
The M29DW324D is a 32 Mbit (4Mb x8 or 2Mbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The device features an asymmetrical block architecture. The M29DW324D has an array of 8 parameter and 63 main blocks and is divided into two Banks, A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible in Bank B and vice versa. Only one bank at a time is allowed to be in program or erase mode. The bank architecture is summarized in Table 2. M29DW324DT locates the Parameter Blocks at the top of the memory address space while the M29DW324DB locates the Parameter Blocks starting from the bottom.
M29DW324DT Maximum Ratings
M29DW324DT Features
SUPPLY VOLTAGE
VCC = 2.7V to 3.6V for Program, Erase and Read
VPP =12V for Fast Program (optional)
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
10µs per Byte/Word typical
Double Word/ Quadruple Byte Program
MEMORY BLOCKS
Dual Bank Memory Array: 16Mbit+16Mbit
Parameter Blocks (Top or Bottom Location)
DUAL OPERATIONS
Read in one bank while Program or Erase in other
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
VPP/WP PIN for FAST PROGRAM and WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
64 bit Security Code
EXTENDED MEMORY BLOCK
Extra block used as security block or to store additional information
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code M29DW324DT: 225Ch
Bottom Device Code M29DW324DB: 225Dh
M29DW324DT Connection Diagram
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