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Part Number: M29F002B

 

 

 

 

Description: The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and pr...


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M29F002B General Description


The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis usingonly a single5VVCC supply.For Programand Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.

M29F002B Maximum Ratings

Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature (3)
40 to 125
°C
TBIAS
Temperature Under Bias
50 to 125
°C
TSTG
Storage Temperature
65 to 150
°C
VIO(2)
Input or Output Voltages
0.6 to 7
V
VCC
Supply Voltage
0.6 to 7
V
V(A9, E, G, RP)(2)
A9, E, G,RP Voltage
0.6 to 13.5
V

M29F002B Connection Diagram

M29F002B  Connection Diagram

M29F002B datasheet

M29F002B
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