Purchase M312L5720BG0-CB3, In-stock M312L5720BG0-CB3 From SeekIC.
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M312L5720BG0-CB3
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DataSheet
General Description
M312L5720BG0-CB3 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to Vss | VIN, VOUT |
-0.5 ~ 3.6 |
V |
| Voltage on VDD supply relative to Vss | VDD,VDDQ |
-1.0 ~ 3.6 |
V |
| Storage temperature | TSTG |
-55 ~ +150 |
|
| Power dissipation | PD |
1.5 * # of component |
W |
| Short circuit current |
IOS |
50 |
mA |
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
M312L5720BG0-CB3 Features
• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
M312L5720BG0-CB3
PDF/DataSheet Download
- Datasheet: M312L5720BG0-CB3
- File Size: 281003 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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