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M312L5720BG0-CB3

Features: • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Differential clock inputs(CK and CK)• DLL aligns DQ and DQS transition with CK transition• Programm...

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SeekIC No. : 004404700 Detail

M312L5720BG0-CB3: Features: • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Differentia...

M312L5720BG0-CB3 Data Sheet

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Part Number:
M312L5720BG0-CB3
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM


Specifications



Parameter
 Symbol
Value
Unit
Voltage on any pin relative to Vss VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD supply relative to Vss VDD,VDDQ
-1.0 ~ 3.6
V
Storage temperature TSTG

-55 ~ +150
Power dissipation PD
1.5 * # of component
W
Short circuit current

IOS

50
mA

Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




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