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Part Number: M34D64
Description: These electrically erasable programmable memory (EEPROM) devices are fabricated with STMicroelectronic...


Description: These electrically erasable programmable memory (EEPROM) devices are fabricated with STMicroelectronic...
These electrically erasable programmable memory (EEPROM) devices are fabricated with STMicroelectronics' High Endurance, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The memories are organized as 8192x8 bits (M34D64) and 4096x8 bits (M34D32), and operate down to
|
Symbol |
Parameter |
Value |
Unit | |
| TA | Ambient Operating Temperature | -40 to 125 | ||
| TSTG | Storage Temperature | -65 to 150 | ||
| TLEAD | Lead Temperature during Soldering 1 | PSDIP8: 10 sec |
260 215 |
|
| SO8: 40 sec | ||||
| VIO | Input or Output range |
-0.6 to 6.5 |
V | |
| VCC | Supply Voltage |
-0.3 to 6.5 |
V | |
| VESD | Electrostatic Discharge Voltage (Human Body model) 2 |
4000 |
V | |
M34D64
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