Features: • Performance range• Burst mode operation• Auto & self refresh capability (4096 Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ± 0.3V power supply• MRS cycle with address key programs Latency (Access from column address) Burst lengt...
M366S1623DT0: Features: • Performance range• Burst mode operation• Auto & self refresh capability (4096 Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ± 0.3V powe...
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Features: • Performance range• Burst mode operation• Auto & self refresh cap...
Features: • Performance range Part No. Max Freq. (Speed) M366S3253DTS-L7C/C...
Features: • Performance range• Burst mode operation• Auto & self refresh cap...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to Vss |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
Voltage on VDD supply relative to Vss |
VDD, VDDQ |
-1.0 ~ 4.6 |
V |
Storage temperature |
TSTG |
-55 ~ +150 |
|
Power dissipation |
PD |
16 |
W |
Short circuit current |
IOS |
50 |
mA |
The Samsung M366S1623DT0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1623DT0 consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.
The M366S1623DT0 is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions M366S1623DT0 are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.