Purchase M368L6423ETM-C(L)CC, In-stock M368L6423ETM-C(L)CC From SeekIC.
- Table of contents:
M368L6423ETM-C(L)CC
-
Suppliers
DataSheet
General Description
M368L6423ETM-C(L)CC Maximum Ratings
| Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to Vss |
VIN, VOUT |
-0.5 ~ 3.6 |
V |
| Voltage on VDD & VDDQ supply relative to VSS |
VDD, VDDQ |
-1.0 ~ 3.6 |
V |
| Storage temperature |
TSTG |
-55 ~ +150 |
|
| Power dissipation |
PD |
1.5 * # of component |
W |
| Short circuit current |
IOS |
50 |
mA |
Note :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
M368L6423ETM-C(L)CC Features
• Power supply : Vdd: 2.6V ± 0.1V, Vddq: 2.6V ± 0.1V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil), single (256MB) and double(512MB) sided
• SSTL_2 Interface
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil), single (256MB) and double(512MB) sided
• SSTL_2 Interface
M3654K
PDF/DataSheet Download
- Datasheet: M3654K
- File Size: 393216 KB
- Manufacturer: EPCOS
- Click here to Download
- ·M3669
- ETC [ETC]
- Mini size of Discrete semiconductor elements
- 512569 KB
- ·M366S0823DTS
- SAMSUNG [Samsung semiconductor]
- PC100 Unbuffered DIMM(168pin) SPD Specification(64Mb D-die base)
- 68718 KB
- ·M366S0924ETS-C7A
- SAMSUNG [Samsung semiconductor]
- SDRAM Unbuffered Module
- 498577 KB
- ·M366S0924FTS
- SAMSUNG [Samsung semiconductor]
- SDRAM Unbuffered Module
- 498078 KB
- ·M366S0924FTS-C7A
- SAMSUNG [Samsung semiconductor]
- SDRAM Unbuffered Module
- 498078 KB
- ·M366S1623DT0
- SAMSUNG [Samsung semiconductor]
- PC100 Unbuffered DIMM
- 139598 KB
- ·M366S1623DT0-C1H
- SAMSUNG [Samsung semiconductor]
- PC100 Unbuffered DIMM
- 139598 KB
- ·M366S1623DT0-C1L
- SAMSUNG [Samsung semiconductor]
- PC100 Unbuffered DIMM
- 139598 KB
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