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Part Number: M36P0R9070E0

 

 

 

 

Description: The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: 512-Mbit Multiple Bank Flash ...


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M36P0R9070E0 General Description


The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: 512-Mbit Multiple Bank Flash memory (the M58PR512J). 128 Mbit PSRAM (the M69KB128AA).

This datasheet should be read in conjunction with the M58PR512J and M69KB128AA datasheets, which are available from www.st.com.

Recommended operating conditions do not allow more than one memory to be active at the same time.

The memory is offered in a Stacked TFBGA107 package. It is supplied with all the bits erased (set to '1').

M36P0R9070E0 Maximum Ratings

Symbol
Parameter
Value
Unit
Min
Max
TA
Ambient Operating Temperature
30
85
°C
TBIAS
Temperature Under Bias
30
85
°C
TSTG
Storage Temperature
65
125
°C
VIO
Input or Output Voltage
0.2
2.45
V
VDD
Supply Voltage
0.2
2.45
V
VDDQ
Input/Output Supply Voltage
0.2
2.45
V
VPP
Program Voltage
1.0
12.6
V
IO
Output Short Circuit Current
 
100
mA
tVPPH
Time for VPP at VPPH
 
100
hours

M36P0R9070E0 Features

Multi-chip package
    1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory
    1 die of 128Mbit (8Mb x16) PSRAM
Supply voltage
    VDDF = VCCP = VDDQ = 1.7 to 1.95V
    VPPF = 9V for fast program (12V tolerant)
Electronic signature
    Manufacturer Code: 20h
    Device Code: 8819
Package
     ECOPACK®

M36P0R9070E0 Connection Diagram

M36P0R9070E0  Connection Diagram

M36P0R9070E0 datasheet

M36P0R9070E0
PDF/DataSheet Download

  • Datasheet: M36P0R9070E0
  • File Size: 205743 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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